CdGeP2 is a III-V ternary semiconductor compound belonging to the chalcopyrite family, combining cadmium, germanium, and phosphorus into a direct bandgap material. It is primarily investigated for infrared optoelectronic applications, particularly in the 1–3 μm wavelength range, where its tunable bandgap and strong nonlinear optical properties make it attractive for laser systems and infrared detectors. While not widely commercialized relative to binary semiconductors like GaAs or InP, CdGeP2 remains an active research material for specialized applications requiring efficient infrared emission or detection in compact device architectures.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)2 entries | 9,462.6 | ksi | — | ||
| ↳ | 9,481.1 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G)2 entries | 5,075.7 | ksi | — | ||
| ↳ | 5,276.5 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1601 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.650 | eV | — | ||
| ↳ | 0.4820 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 16.12 | - | — | ||
| ↳ | 19.08 | - | — | ||
| ↳ | 14.89 range 13.77–16.01median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.00861 | C/m² | — | ||
| ↳ | 0.8239 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -95.01 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1020 | eV/atom | — |