CdGa₂Se₄ is a ternary II-VI semiconductor compound combining cadmium, gallium, and selenium in a chalcopyrite crystal structure. This material is primarily investigated for optoelectronic and photovoltaic applications, particularly in research contexts exploring wide-bandgap semiconductors for high-efficiency solar cells, radiation detectors, and infrared optical devices. Engineers consider CdGa₂Se₄ when conventional binary semiconductors (GaAs, CdSe) cannot meet bandgap or lattice-matching requirements, though its commercial adoption remains limited compared to established alternatives, making it most relevant for specialized R&D projects rather than high-volume manufacturing.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 37.20 | GPa | — | ||
Poisson's Ratio(ν) | 0.2700 | - | — | ||
Shear Modulus(G) | 21.74 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.131 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.750 | eV | — | ||
| ↳ | 1.318 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 11.48 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.5880 | C/m² | — | ||
Seebeck Coefficient(S) | -52.25 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6111 | eV/atom | — |