CdGa₂Se₄ is a ternary II-VI semiconductor compound combining cadmium, gallium, and selenium in a chalcopyrite crystal structure. This material is primarily investigated for optoelectronic and photovoltaic applications, particularly in research contexts exploring wide-bandgap semiconductors for high-efficiency solar cells, radiation detectors, and infrared optical devices. Engineers consider CdGa₂Se₄ when conventional binary semiconductors (GaAs, CdSe) cannot meet bandgap or lattice-matching requirements, though its commercial adoption remains limited compared to established alternatives, making it most relevant for specialized R&D projects rather than high-volume manufacturing.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 5,395.4 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2700 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 3,153.1 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1854 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 2.750 | eV | Measured | ||
| ↳ | 1.318 | eV | DFT · OptB88vdW | ||
| ↳ | 2.723 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 11.48 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.455 | - | DFT · OptB88vdW | ||
| ↳ | 5.889 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.1600 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 1.030 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.5880 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000306 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00233 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -52.25 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 336.7 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 8.470 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6111 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data