CdCu₂SnS₄ is a quaternary chalcogenide semiconductor compound combining cadmium, copper, tin, and sulfur into a tetragonal crystal structure. This material is primarily investigated in photovoltaic and optoelectronic research contexts as a potential absorber layer for thin-film solar cells and as an alternative to traditional CIGS (copper indium gallium selenide) absorbers. While not yet commercialized at production scale, CdCu₂SnS₄ is notable within the kesterite and stannite compound family for its tuneable bandgap, earth-abundant constituent elements (particularly the substitution of indium with tin), and potential for cost-effective photovoltaic devices; however, engineers should be aware that cadmium toxicity and processing complexity remain barriers to widespread industrial adoption compared to established alternatives.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,659.5 | ksi | — | ||
Poisson's Ratio(ν) | 0.3500 | - | — | ||
Shear Modulus(G) | 3,553.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1684 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.370 | eV | — | ||
| ↳ | 0.01900 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00690 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4675 | eV/atom | — |