CdCu₂SnS₄ is a quaternary chalcogenide semiconductor compound combining cadmium, copper, tin, and sulfur into a tetragonal crystal structure. This material is primarily investigated in photovoltaic and optoelectronic research contexts as a potential absorber layer for thin-film solar cells and as an alternative to traditional CIGS (copper indium gallium selenide) absorbers. While not yet commercialized at production scale, CdCu₂SnS₄ is notable within the kesterite and stannite compound family for its tuneable bandgap, earth-abundant constituent elements (particularly the substitution of indium with tin), and potential for cost-effective photovoltaic devices; however, engineers should be aware that cadmium toxicity and processing complexity remain barriers to widespread industrial adoption compared to established alternatives.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 66.60 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 24.50 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.661 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.370 | eV | Measured | ||
| ↳ | 0.01900 | eV | DFT · OptB88vdW | ||
| ↳ | 0.5970 | eV | DFT · TBmBJ | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 19.26 | - | DFT · OptB88vdW | ||
| ↳ | 9.706 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 19.25 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00690 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4675 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data