Cd5Ga2(Te3S)2

semiconductor

· Cd5Ga2(Te3S)2

Cd₅Ga₂(Te₃S)₂ is an experimental quaternary semiconductor compound combining cadmium, gallium, tellurium, and sulfur in a mixed-anion structure. This material belongs to the family of II-VI semiconductors with potential for optoelectronic and photovoltaic applications, though it remains largely confined to research settings rather than established industrial production. The mixed Te/S anion sublattice offers tunable band gap and lattice parameter engineering, making it relevant for researchers exploring novel photoabsorbers, radiation detectors, or thermoelectric devices where conventional binary or ternary semiconductors reach performance limits.

experimental photovoltaic absorbersradiation detection materialsoptoelectronic researchband gap engineering studiesthermoelectric device developmentIII-VI semiconductor research

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.290	eV	—

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Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Cd5Ga2(Te3S)2

Electrical Properties

Regulatory Screening

Environmental

Export Control