Cd5Ga2(Te3S)2
semiconductor· Cd5Ga2(Te3S)2
Cd₅Ga₂(Te₃S)₂ is an experimental quaternary semiconductor compound combining cadmium, gallium, tellurium, and sulfur in a mixed-anion structure. This material belongs to the family of II-VI semiconductors with potential for optoelectronic and photovoltaic applications, though it remains largely confined to research settings rather than established industrial production. The mixed Te/S anion sublattice offers tunable band gap and lattice parameter engineering, making it relevant for researchers exploring novel photoabsorbers, radiation detectors, or thermoelectric devices where conventional binary or ternary semiconductors reach performance limits.
experimental photovoltaic absorbersradiation detection materialsoptoelectronic researchband gap engineering studiesthermoelectric device developmentIII-VI semiconductor research
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
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