BTaOFN
semiconductor· BTaOFN
BTaOFN is an experimental fluoride-based semiconductor compound containing barium, tantalum, oxygen, and fluorine elements. This material belongs to the family of mixed-halide perovskites and related wide-bandgap semiconductors under active research for next-generation optoelectronic and photonic applications. Its fluorine incorporation and tantalum content position it as a candidate for UV-responsive devices, scintillators, or radiation detection systems where traditional semiconductors reach performance limits.
UV photodetectorsScintillation detectorsRadiation detectionWide-bandgap semiconductorsResearch optoelectronicsExperimental photonic devices
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.