BTaOFN

semiconductor

· BTaOFN

BTaOFN is an experimental fluoride-based semiconductor compound containing barium, tantalum, oxygen, and fluorine elements. This material belongs to the family of mixed-halide perovskites and related wide-bandgap semiconductors under active research for next-generation optoelectronic and photonic applications. Its fluorine incorporation and tantalum content position it as a candidate for UV-responsive devices, scintillators, or radiation detection systems where traditional semiconductors reach performance limits.

UV photodetectorsScintillation detectorsRadiation detectionWide-bandgap semiconductorsResearch optoelectronicsExperimental photonic devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.100	eV	—
Magnetic Moment(μB)	1.614e-15	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.480	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BTaOFN

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control