BiSi is a binary semiconductor compound combining bismuth and silicon, representing an emerging material in the broader family of group V–IV heterostructures. This is primarily a research material being explored for its potential in next-generation optoelectronic and thermoelectric devices, where the combination of elements offers tunable band gap and carrier mobility characteristics distinct from conventional silicon or bismuth telluride compounds.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 21.83 | GPa | — | ||
Exfoliation Energy(Eexf) | 221.5 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 11.34 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 6.471 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.560 | eV | — | ||
| ↳ | 1.767 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 76.41 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -222.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.4652 | eV/atom | — |