BiSi is a binary semiconductor compound combining bismuth and silicon, representing an emerging material in the broader family of group V–IV heterostructures. This is primarily a research material being explored for its potential in next-generation optoelectronic and thermoelectric devices, where the combination of elements offers tunable band gap and carrier mobility characteristics distinct from conventional silicon or bismuth telluride compounds.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,166.2 | ksi | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 221.5 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.3000 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 1,644.7 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2338 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.560 | eV | Measured | ||
| ↳ | 1.767 | eV | DFT · OptB88vdW | ||
| ↳ | 2.407 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 76.41 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 11.08 | - | DFT · OptB88vdW | ||
| ↳ | 8.446 | - | DFT · TBmBJ | ||
Electron Effective Mass(m*e) | 0.9800 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.173 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00251 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00189 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -222.2 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 359.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 14.49 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.4652 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data