BiSBr

Name: BiSBr
Brand: MatWorld

semiconductor

· BiSBr

BiSBr is a layered bismuth-based semiconductor compound belonging to the family of two-dimensional (2D) materials and van der Waals heterostructures. This is primarily a research material under investigation for next-generation optoelectronic and electronic devices, with potential applications in photovoltaics, photodetectors, and field-effect transistors where its layered crystal structure enables mechanical exfoliation into ultrathin sheets. Engineers and researchers are exploring BiSBr because its anisotropic properties and tunable bandgap characteristics make it attractive for flexible electronics and integrated photonics applications where conventional bulk semiconductors are unsuitable.

2D materials researchPhotodetectors and optoelectronicsFlexible electronics prototypesPhotovoltaic cells (emerging)Field-effect transistors (FETs)Van der Waals heterostructure engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	3,728.9	ksi	DFT · OptB88vdW
Exfoliation Energy(Eexf)	111	meV/atom	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3000	-	DFT · OptB88vdW
Shear Modulus(G)	1,785.4	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2303	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)4 entries	1.945	eV	DFT · OptB88vdW
↳	2.667	eV	DFT · TBmBJ
↳	1.880	eV	Measured
↳	1.920	eV	Measured
Dielectric Constant (Relative Permittivity)(εr)	65.62	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	9.569	-	DFT · OptB88vdW
↳	7.994	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.6967	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	2.107	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.000	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.00174	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.00151	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-188.8	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	364.6	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	9.440	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.6117	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BiSBr — Properties & Data | MatWorld

BiSBr

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