BiSBr is a layered bismuth-based semiconductor compound belonging to the family of two-dimensional (2D) materials and van der Waals heterostructures. This is primarily a research material under investigation for next-generation optoelectronic and electronic devices, with potential applications in photovoltaics, photodetectors, and field-effect transistors where its layered crystal structure enables mechanical exfoliation into ultrathin sheets. Engineers and researchers are exploring BiSBr because its anisotropic properties and tunable bandgap characteristics make it attractive for flexible electronics and integrated photonics applications where conventional bulk semiconductors are unsuitable.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 3,728.9 | ksi | — | ||
Exfoliation Energy(Eexf) | 111 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.3000 | - | — | ||
Shear Modulus(G) | 1,785.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2303 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.920 | eV | — | ||
| ↳ | 1.880 | eV | — | ||
| ↳ | 1.945 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 65.62 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -188.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6117 | eV/atom | — |