BeGaSb

ceramic

· JVASP-67819· BeGaSb

BeGaSb is a ternary III-V semiconductor ceramic compound combining beryllium, gallium, and antimony. This material belongs to the wide-bandgap semiconductor family and is primarily of research interest for high-frequency and high-power electronic applications where its wide bandgap and thermal stability offer potential advantages over conventional III-V semiconductors. BeGaSb and related beryllium-containing III-V compounds are explored for next-generation RF devices, optoelectronic components, and extreme-environment electronics, though commercial adoption remains limited compared to more established GaAs or GaN platforms.

wide-bandgap semiconductorshigh-frequency RF deviceshigh-temperature electronicsoptoelectronic researchextreme-environment applicationsexperimental compound semiconductors

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	46.08	GPa	—
Shear Modulus(G)	-11.57	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	5.756	kg/m³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.5412	eV/atom	—
Formation Energy(ΔHf)	0.4422	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeGaSb

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental