BeGaSb is a ternary III-V semiconductor ceramic compound combining beryllium, gallium, and antimony. This material belongs to the wide-bandgap semiconductor family and is primarily of research interest for high-frequency and high-power electronic applications where its wide bandgap and thermal stability offer potential advantages over conventional III-V semiconductors. BeGaSb and related beryllium-containing III-V compounds are explored for next-generation RF devices, optoelectronic components, and extreme-environment electronics, though commercial adoption remains limited compared to more established GaAs or GaN platforms.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,683.3 | ksi | — | ||
Shear Modulus(G) | -1,678.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2079 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.5412 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.4422 | eV/atom | — |