BeGaP is a semiconductor ceramic compound composed of beryllium, gallium, and phosphorus, belonging to the III-V semiconductor family. It is primarily investigated in research and specialized optoelectronic applications where wide bandgap semiconductors offer advantages in high-temperature and high-power device environments. BeGaP is notable for its potential in UV photodetectors, high-frequency electronics, and extreme-environment sensing due to the thermal stability and electronic properties characteristic of beryllium-containing III-V compounds, though it remains less commercialized than alternative wide-bandgap materials such as GaN or SiC.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.009 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6260 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.3387 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data