BeGaP

ceramic

· JVASP-67253· BeGaP

BeGaP is a semiconductor ceramic compound composed of beryllium, gallium, and phosphorus, belonging to the III-V semiconductor family. It is primarily investigated in research and specialized optoelectronic applications where wide bandgap semiconductors offer advantages in high-temperature and high-power device environments. BeGaP is notable for its potential in UV photodetectors, high-frequency electronics, and extreme-environment sensing due to the thermal stability and electronic properties characteristic of beryllium-containing III-V compounds, though it remains less commercialized than alternative wide-bandgap materials such as GaN or SiC.

UV photodetectorshigh-temperature semiconductorswide-bandgap electronicsresearch optoelectronicsextreme-environment sensinghigh-frequency RF devices

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1448	lb/in³	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	0.000	µB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.6260	eV/atom	—
Formation Energy(ΔHf)	0.3387	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BeGaP

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental