BAsP2 is a boron arsenide phosphide ceramic compound, representing a mixed-anion semiconductor material in the III-V ceramic family. This material is primarily of research and development interest, investigated for advanced optoelectronic and thermal management applications where its wide bandgap and thermal properties offer potential advantages over conventional semiconductors. While not yet widely commercialized, materials in this class are explored for high-power electronics, UV optoelectronics, and specialized thermal conductivity applications where conventional alternatives reach performance limits.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,586.4 | ksi | — | ||
Poisson's Ratio(ν) | 0.4600 | - | — | ||
Shear Modulus(G) | -1,173.4 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1333 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.000 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.4793 | eV/atom | — | ||
Formation Energy(ΔHf) | 0.2526 | eV/atom | — |