BaHgS₂ is a ternary semiconductor compound composed of barium, mercury, and sulfur, belonging to the chalcogenide family of materials. This is primarily a research-stage compound investigated for potential optoelectronic and photovoltaic applications, with interest driven by its wide bandgap and sulfide-based chemistry that may enable tunable electronic properties. While not yet established in mainstream commercial manufacturing, materials in this chemical family are explored for next-generation solar cells, infrared detectors, and other semiconductor devices where alternatives like CdTe or CIGS face environmental or performance constraints.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.852 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.930 | eV | — | ||
| ↳ | 1.157 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 19.29 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.07833 | C/m² | — | ||
Seebeck Coefficient(S) | -102.2 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.205 | eV/atom | — |