BaHgS2

Name: BaHgS2
Brand: MatWorld

semiconductor

· BaHgS2

BaHgS₂ is a ternary semiconductor compound composed of barium, mercury, and sulfur, belonging to the chalcogenide family of materials. This is primarily a research-stage compound investigated for potential optoelectronic and photovoltaic applications, with interest driven by its wide bandgap and sulfide-based chemistry that may enable tunable electronic properties. While not yet established in mainstream commercial manufacturing, materials in this chemical family are explored for next-generation solar cells, infrared detectors, and other semiconductor devices where alternatives like CdTe or CIGS face environmental or performance constraints.

experimental photovoltaicsinfrared optoelectronicsresearch semiconductor compoundswide-bandgap deviceschalcogenide materials developmentnon-toxic semiconductor alternatives

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Density(ρ)	0.2114	lb/in³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Carrier

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	1.930	eV	Measured
↳	1.157	eV	DFT · OptB88vdW
Dielectric Constant (Relative Permittivity)(εr)	19.29	-	DFT · OptB88vdW
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.07833	C/m²	DFT · OptB88vdW
Thermoelectric Power Factor(PF)2 entries	0.000721	W/(m·K²)	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	0.000878	W/(m·K²)	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C
Seebeck Coefficient(S)2 entries	-102.2	μV/K	DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C
↳	281.3	μV/K	DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.205	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaHgS2 — Properties & Data | MatWorld

BaHgS2

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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