BaGe2 is a binary intermetallic semiconductor compound composed of barium and germanium, belonging to the class of earth-abundant semiconducting materials with potential for optoelectronic and thermoelectric applications. While primarily a research compound rather than a commercial material in widespread use, BaGe2 represents an emerging candidate in the semiconductor family for applications where cost-effectiveness and material abundance are priorities over traditional III-V semiconductors. Engineers investigating alternative semiconductors for niche applications—particularly those requiring moderate bandgap materials in exploratory device designs—may evaluate BaGe2 as a proof-of-concept or laboratory-scale material.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 41.40 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2800 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 22.12 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.124 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.000 | eV | Measured | ||
| ↳ | 0.5600 | eV | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.6274 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data