BaGe2
semiconductorBaGe2 is a binary intermetallic semiconductor compound composed of barium and germanium, belonging to the class of earth-abundant semiconducting materials with potential for optoelectronic and thermoelectric applications. While primarily a research compound rather than a commercial material in widespread use, BaGe2 represents an emerging candidate in the semiconductor family for applications where cost-effectiveness and material abundance are priorities over traditional III-V semiconductors. Engineers investigating alternative semiconductors for niche applications—particularly those requiring moderate bandgap materials in exploratory device designs—may evaluate BaGe2 as a proof-of-concept or laboratory-scale material.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 6,004.6 | ksi | — | ||
Poisson's Ratio(ν) | 0.2800 | - | — | ||
Shear Modulus(G) | 3,208.2 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1851 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.000 | eV | — | ||
| ↳ | 0.5600 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -16.11 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.6274 | eV/atom | — |