BaGaO2N

ceramic

· BaGaO2N

BaGaO₂N is an experimental oxynitride ceramic compound combining barium, gallium, oxygen, and nitrogen in a mixed-anion crystal structure. This material belongs to the family of wide-bandgap semiconductors and functional ceramics, currently under research rather than established in high-volume production. Its potential applications leverage the unique electronic and optical properties arising from nitrogen incorporation into gallium oxide frameworks, with interest in next-generation power electronics, photocatalysis, and optoelectronic devices where improved bandgap engineering and thermal stability compared to conventional GaN or Ga₂O₃ may be advantageous.

wide-bandgap semiconductorspower electronics (research)photocatalytic materialsoptoelectronic deviceshigh-temperature ceramics (exploratory)

Compliance & Regulations

?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.000	eV	—
Magnetic Moment(μB)	1.999	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.6200	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

BaGaO2N

Electrical Properties

Other Properties

Regulatory Screening

Environmental