BaGaO2N
ceramic· BaGaO2N
BaGaO₂N is an experimental oxynitride ceramic compound combining barium, gallium, oxygen, and nitrogen in a mixed-anion crystal structure. This material belongs to the family of wide-bandgap semiconductors and functional ceramics, currently under research rather than established in high-volume production. Its potential applications leverage the unique electronic and optical properties arising from nitrogen incorporation into gallium oxide frameworks, with interest in next-generation power electronics, photocatalysis, and optoelectronic devices where improved bandgap engineering and thermal stability compared to conventional GaN or Ga₂O₃ may be advantageous.
wide-bandgap semiconductorspower electronics (research)photocatalytic materialsoptoelectronic deviceshigh-temperature ceramics (exploratory)
Compliance & Regulations
?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — | |
Magnetic Moment(μB) | — | μB | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.