BaGa₂SiSe₆ is a quaternary semiconductor compound belonging to the chalcogenide family, combining barium, gallium, silicon, and selenium into a crystalline structure. This is a research-stage material of interest in nonlinear optics and mid-infrared photonics applications, where its wide bandgap and potential for second-harmonic generation or parametric amplification could offer advantages over more common alternatives like GaAs or ZnSe in specific wavelength windows. The material represents exploration into mixed-metal chalcogenide systems for expanding the optical and electronic property space available to device designers working in infrared and quantum optics.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 4.803 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.880 | eV | — | ||
| ↳ | 2.082 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.9267 | eV/atom | — |