BaGa₂SiSe₆ is a quaternary semiconductor compound belonging to the chalcogenide family, combining barium, gallium, silicon, and selenium into a crystalline structure. This is a research-stage material of interest in nonlinear optics and mid-infrared photonics applications, where its wide bandgap and potential for second-harmonic generation or parametric amplification could offer advantages over more common alternatives like GaAs or ZnSe in specific wavelength windows. The material represents exploration into mixed-metal chalcogenide systems for expanding the optical and electronic property space available to device designers working in infrared and quantum optics.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1735 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 2.880 | eV | Measured | ||
| ↳ | 2.082 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 8.022 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.9267 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data