Ba4 In2 Bi2 S10
semiconductor· Ba4 In2 Bi2 S10
Ba₄In₂Bi₂S₁₀ is a quaternary sulfide semiconductor compound combining barium, indium, and bismuth in a layered crystal structure. This is a research-stage material being investigated for its potential as a mid-infrared photonic material and in solid-state thermoelectric applications, where the complex mixed-metal sulfide framework offers tunable bandgap and carrier transport properties not readily accessible in simpler binary or ternary semiconductors.
infrared optics (research)thermoelectric devices (experimental)photonic materialssemiconductor researchnarrow-gap semiconductors
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.