Ba4 In2 Bi2 S10

semiconductor

· Ba4 In2 Bi2 S10

Ba₄In₂Bi₂S₁₀ is a quaternary sulfide semiconductor compound combining barium, indium, and bismuth in a layered crystal structure. This is a research-stage material being investigated for its potential as a mid-infrared photonic material and in solid-state thermoelectric applications, where the complex mixed-metal sulfide framework offers tunable bandgap and carrier transport properties not readily accessible in simpler binary or ternary semiconductors.

infrared optics (research)thermoelectric devices (experimental)photonic materialssemiconductor researchnarrow-gap semiconductors

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	1.419	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	-1.393	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba4 In2 Bi2 S10

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control