Ba3 N2

semiconductor

· Ba3 N2

Ba₃N₂ is an ionic semiconductor compound belonging to the metal nitride family, composed of barium and nitrogen. This material is primarily investigated in research contexts for advanced semiconductor and energy applications, particularly in wide-bandgap electronics and photocatalysis, where its nitrogen-rich composition offers potential advantages in charge transport and light absorption compared to traditional oxide semiconductors. While not yet widely deployed in commercial products, barium nitride compounds are of interest to materials scientists exploring alternatives for high-temperature semiconductors, photovoltaic devices, and catalytic applications where stability and electronic properties of metal nitrides are advantageous.

wide-bandgap semiconductorsphotocatalytic materialsresearch phase electronicshigh-temperature device applicationsnitrogen-based compounds

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Bulk Modulus(K)	40.93	GPa	—
Shear Modulus(G)	25.34	GPa	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.05950	eV	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	0.07800	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Ba3 N2

Mechanical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control