Ba3 N2
semiconductorBa₃N₂ is an ionic semiconductor compound belonging to the metal nitride family, composed of barium and nitrogen. This material is primarily investigated in research contexts for advanced semiconductor and energy applications, particularly in wide-bandgap electronics and photocatalysis, where its nitrogen-rich composition offers potential advantages in charge transport and light absorption compared to traditional oxide semiconductors. While not yet widely deployed in commercial products, barium nitride compounds are of interest to materials scientists exploring alternatives for high-temperature semiconductors, photovoltaic devices, and catalytic applications where stability and electronic properties of metal nitrides are advantageous.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | — | ksi | — | — | |
Shear Modulus(G) | — | ksi | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | — | eV/atom | — | — |