B₆As is an experimental binary semiconductor compound combining boron and arsenic in a covalently bonded crystal structure. It belongs to the broader class of III-V and boron-based semiconductors under active research for advanced electronic and optoelectronic applications. While not yet commercially mature, B₆As and related boron arsenide compounds are being investigated for next-generation devices requiring high thermal conductivity, wide bandgap characteristics, and chemical stability in extreme environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 185.5 | GPa | — | ||
Poisson's Ratio(ν) | 0.1500 | - | — | ||
Shear Modulus(G) | 171.6 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.559 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.510 | eV | — | ||
| ↳ | 2.739 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.080 | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -209.5 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1696 | eV/atom | — |