B₆As is an experimental binary semiconductor compound combining boron and arsenic in a covalently bonded crystal structure. It belongs to the broader class of III-V and boron-based semiconductors under active research for advanced electronic and optoelectronic applications. While not yet commercially mature, B₆As and related boron arsenide compounds are being investigated for next-generation devices requiring high thermal conductivity, wide bandgap characteristics, and chemical stability in extreme environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 26,898.7 | ksi | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.1500 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 24,887 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1286 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.510 | eV | Measured | ||
| ↳ | 2.739 | eV | DFT · OptB88vdW | ||
| ↳ | 2.929 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.080 | - | DFT · PBE | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 7.885 | - | DFT · OptB88vdW | ||
| ↳ | 7.487 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.4867 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 0.8433 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.00334 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00320 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -209.5 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 341 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 5.530 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1696 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data