B₂Se is a ceramic compound in the boron selenide family, representing a wide-bandgap semiconductor material with potential applications in high-temperature and radiation-resistant electronics. This material is primarily of research and development interest rather than a widely commercialized product; it belongs to a class of binary semiconductors being explored for next-generation device applications where conventional silicon or gallium arsenide technologies face limitations. Engineers consider boron selenide compounds for specialized optoelectronic and high-energy physics applications due to their inherent thermal stability and potential for operation in extreme environments.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 82.96 | GPa | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2000 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 71.73 | GPa | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.903 range 3.582–4.224median of 2 measurements | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.4050 | eV | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 20.90 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6066 range 0.5274–0.6859median of 2 measurements | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | 0.5477 range 0.4685–0.6270median of 2 measurements | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data