B₂Se is a ceramic compound in the boron selenide family, representing a wide-bandgap semiconductor material with potential applications in high-temperature and radiation-resistant electronics. This material is primarily of research and development interest rather than a widely commercialized product; it belongs to a class of binary semiconductors being explored for next-generation device applications where conventional silicon or gallium arsenide technologies face limitations. Engineers consider boron selenide compounds for specialized optoelectronic and high-energy physics applications due to their inherent thermal stability and potential for operation in extreme environments.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 12,032.3 | ksi | — | ||
Poisson's Ratio(ν) | 0.2000 | - | — | ||
Shear Modulus(G) | 10,403.6 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1410 range 0.1294–0.1526median of 2 measurements | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2025 range 0.000–0.4050median of 2 measurements | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.6066 range 0.5274–0.6859median of 2 measurements | eV/atom | — | ||
Formation Energy(ΔHf) | 0.5477 range 0.4685–0.6270median of 2 measurements | eV/atom | — |