AsSeI is a ternary chalcogenide semiconductor compound combining arsenic, selenium, and iodine. This material belongs to the family of mixed-halide and mixed-chalcogenide semiconductors, which are primarily of research interest for optoelectronic and photovoltaic applications. AsSeI and related compounds are investigated for potential use in thin-film solar cells, infrared detectors, and nonlinear optical devices, where the tunable bandgap and layered crystal structure offer advantages over more conventional semiconductors, though commercial deployment remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 33.13 | GPa | — | ||
Shear Modulus(G) | -2.820 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.143 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.760 | eV | — | ||
| ↳ | 1.202 | eV | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -169.4 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01390 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1752 | eV/atom | — |