AsSeI is a ternary chalcogenide semiconductor compound combining arsenic, selenium, and iodine. This material belongs to the family of mixed-halide and mixed-chalcogenide semiconductors, which are primarily of research interest for optoelectronic and photovoltaic applications. AsSeI and related compounds are investigated for potential use in thin-film solar cells, infrared detectors, and nonlinear optical devices, where the tunable bandgap and layered crystal structure offer advantages over more conventional semiconductors, though commercial deployment remains limited.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 4,805.1 | ksi | DFT · OptB88vdW | ||
Shear Modulus(G) | -409 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1858 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 1.082 | eV | DFT · OptB88vdW | ||
| ↳ | 1.760 | eV | Measured | ||
High-Frequency Dielectric Constant (ε∞)(ε∞) | 15.68 | - | DFT · OptB88vdW | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.01390 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1752 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data