AsGaO3
semiconductorAsGaO₃ is an arsenic-gallium oxide compound belonging to the family of III-V semiconductor oxides, representing an experimental material system rather than an established commercial compound. This material is primarily of research interest for potential optoelectronic and high-temperature semiconductor applications, where the combination of gallium oxide's wide bandgap with arsenic doping could offer enhanced performance for UV detection, power electronics, or high-frequency devices. The material remains largely in the exploratory phase, with limited industrial deployment, making it most relevant to researchers and advanced materials engineers evaluating next-generation semiconductor alternatives to established gallium nitride and gallium oxide platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 1.300 | eV | — | ||
Magnetic Moment(μB) | -7.550e-7 | μB | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf)2 entries | -0.9410 | eV/atom | — | ||
| ↳ | 1.020 | eV/atom | — |