AsGaO3

semiconductor
· AsGaO3

AsGaO₃ is an arsenic-gallium oxide compound belonging to the family of III-V semiconductor oxides, representing an experimental material system rather than an established commercial compound. This material is primarily of research interest for potential optoelectronic and high-temperature semiconductor applications, where the combination of gallium oxide's wide bandgap with arsenic doping could offer enhanced performance for UV detection, power electronics, or high-frequency devices. The material remains largely in the exploratory phase, with limited industrial deployment, making it most relevant to researchers and advanced materials engineers evaluating next-generation semiconductor alternatives to established gallium nitride and gallium oxide platforms.

UV photodetectors (research phase)Wide-bandgap semiconductorsHigh-temperature electronics (emerging)Optoelectronic devices (experimental)Power semiconductor researchMaterials science prototyping

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
Units:
siimperial
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Band Gap(Eg)2 entries
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Magnetic Moment(μB)
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N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
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Formation Energy(ΔHf)2 entries
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N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.