As₄S₃ is an inorganic ceramic compound composed of arsenic and sulfur, belonging to the family of chalcogenide ceramics. This is a research-phase material studied for potential applications in optoelectronics and photonic devices, where its layered crystal structure and tunable bandgap properties are of interest. As a chalcogenide ceramic, it represents an alternative to traditional semiconductors for specialized infrared optics and nonlinear optical applications where conventional materials reach their performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 11.80 | GPa | — | ||
Exfoliation Energy(Eexf) | 93.98 | meV/atom | — | ||
Poisson's Ratio(ν) | 0.2900 | - | — | ||
Shear Modulus(G) | 6.520 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.535 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 1.808 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 7.980 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | — | ||
Seebeck Coefficient(S) | -248.1 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02300 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.1090 | eV/atom | — |