As₄S₃ is an inorganic ceramic compound composed of arsenic and sulfur, belonging to the family of chalcogenide ceramics. This is a research-phase material studied for potential applications in optoelectronics and photonic devices, where its layered crystal structure and tunable bandgap properties are of interest. As a chalcogenide ceramic, it represents an alternative to traditional semiconductors for specialized infrared optics and nonlinear optical applications where conventional materials reach their performance limits.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 1,711.4 | ksi | DFT · OptB88vdW | ||
Exfoliation Energy(Eexf) | 93.98 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν) | 0.2900 | - | DFT · OptB88vdW | ||
Shear Modulus(G) | 945.6 | ksi | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.1277 | lb/in³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 1.808 | eV | DFT · OptB88vdW | ||
| ↳ | 2.423 | eV | DFT · TBmBJ | ||
| ↳ | 2.600 | eV | DFT · HSE06 | ||
Dielectric Constant (Relative Permittivity)(εr) | 7.980 | - | DFT · OptB88vdW | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 8.628 | - | DFT · OptB88vdW | ||
| ↳ | 6.932 | - | DFT · TBmBJ | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij) | 0.000 | C/m² | DFT · OptB88vdW | ||
Thermoelectric Power Factor(PF)2 entries | 0.000556 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.000925 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -248.1 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 257.6 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 14.12 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02300 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf) | -0.1090 | eV/atom | DFT · OptB88vdW |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data