AlGaO2S

semiconductor

· AlGaO2S

AlGaO2S is a quaternary semiconductor compound combining aluminum, gallium, oxygen, and sulfur elements, representing an emerging material in the oxysulfide semiconductor family. While primarily a research-phase compound rather than a widely commercialized material, it belongs to the broader class of mixed-anion semiconductors being investigated for optoelectronic and photovoltaic applications where tunable bandgap and visible-light absorption characteristics are advantageous. Engineers considering this material should recognize it as a development-stage composition with potential advantages in photocatalysis, thin-film solar cells, and LED applications where conventional III-V or oxide semiconductors have limitations, though current availability and processing maturity remain limited compared to established semiconductor platforms.

photocatalytic materialsresearch optoelectronicsthin-film solar cellsvisible-light semiconductor devicesemerging photovoltaics

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	0.2000	eV	—
Magnetic Moment(μB)	0.0000476	μB	—

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Formation Energy(ΔHf)	1.460	eV/atom	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AlGaO2S

Electrical Properties

Other Properties

Regulatory Screening

Environmental

Export Control