AlGaO2S is a quaternary semiconductor compound combining aluminum, gallium, oxygen, and sulfur elements, representing an emerging material in the oxysulfide semiconductor family. While primarily a research-phase compound rather than a widely commercialized material, it belongs to the broader class of mixed-anion semiconductors being investigated for optoelectronic and photovoltaic applications where tunable bandgap and visible-light absorption characteristics are advantageous. Engineers considering this material should recognize it as a development-stage composition with potential advantages in photocatalysis, thin-film solar cells, and LED applications where conventional III-V or oxide semiconductors have limitations, though current availability and processing maturity remain limited compared to established semiconductor platforms.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 0.2000 | eV | DFT · GLLB-SC | ||
Magnetic Moment(μB) | 0.0000476 | μB | DFT |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Formation Energy(ΔHf) | 1.460 | eV/atom | DFT |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data