Aluminum arsenide (AlAs) is a III-V compound semiconductor, not a metal despite the classification label. It is a direct-bandgap material with a zinc-blende crystal structure, commonly used in optoelectronic and high-frequency electronic devices. The material finds primary application in heterojunction structures for integrated circuits, high-electron-mobility transistors (HEMTs), and as a barrier or spacer layer in compound semiconductor device stacks, where its lattice compatibility with GaAs and superior thermal properties make it valuable for thermal management and device isolation in advanced RF and microwave systems.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 69.78 | GPa | — | ||
| ↳ | 69.78 | GPa | — | ||
| ↳ | 68.87 | GPa | — | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | ||
Elastic Anisotropy(AU) | 0.5389 | - | — | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | — | ||
Poisson's Ratio(ν)2 entries | 0.2637 | - | — | ||
| ↳ | 0.2500 | - | — | ||
Shear Modulus(G)3 entries | 39.14 | GPa | — | ||
| ↳ | 39.14 | GPa | — | ||
| ↳ | 42.58 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 86.80 | W/(m·K) | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.607 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.000 | eV | — | ||
| ↳ | 1.681 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 11.55 | - | — | ||
| ↳ | 11.71 | - | — | ||
| ↳ | 10.80 range 9.810–11.80median of 2 measurements | - | — | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij)2 entries | 0.04407 | C/m² | — | ||
| ↳ | 0.6601 | C/m² | — | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | ||
Seebeck Coefficient(S) | -153.8 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00710 | eV/atom | — | ||
Formation Energy(ΔHf)2 entries | -0.6027 | eV/atom | — | ||
| ↳ | -0.5764 | eV/atom | — |