AlAs
metal· AlAs
Aluminum arsenide (AlAs) is a III-V compound semiconductor, not a metal despite the classification label. It is a direct-bandgap material with a zinc-blende crystal structure, commonly used in optoelectronic and high-frequency electronic devices. The material finds primary application in heterojunction structures for integrated circuits, high-electron-mobility transistors (HEMTs), and as a barrier or spacer layer in compound semiconductor device stacks, where its lattice compatibility with GaAs and superior thermal properties make it valuable for thermal management and device isolation in advanced RF and microwave systems.
high-electron-mobility transistors (HEMTs)integrated circuit heterojunctionsRF and microwave devicesoptoelectronic componentsthermal barrier layerscompound semiconductor heterostructures
Compliance & Regulations
?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — | |
| ↳ | — | ksi | — | — | |
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | — | — | |
Elastic Anisotropy(AU) | — | - | — | — | |
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | ksi | — | — | |
Poisson's Ratio(ν)2 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
Shear Modulus(G)3 entries | — | ksi | — | — | |
| ↳ | — | ksi | — | — | |
| ↳ | — | ksi | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | — | BTU/(hr·ft·°F) | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | — | lb/in³ | — | — |
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | — | eV | — | — | |
| ↳ | — | eV | — | — | |
Dielectric Constant (Relative Permittivity)(εr)3 entries | — | - | — | — | |
| ↳ | — | - | — | — | |
| ↳ | — median of 2 measurements | - | — | — | |
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | — | — | |
Total Dielectric Tensor(ε) | Matrix (redacted) | - | — | — | |
Magnetic Moment(μB) | — | µB | — | — | |
Piezoelectric Modulus(eij)2 entries | — | C/m² | — | — | |
| ↳ | — | C/m² | — | — | |
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | — | — | |
Seebeck Coefficient(S) | — | µV/K | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | — | eV/atom | — | — | |
Formation Energy(ΔHf)2 entries | — | eV/atom | — | — | |
| ↳ | — | eV/atom | — | — |
N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form / heat treatment / basis.
Verified Unverified Low confidence (<80%) Link to source
Regulatory Screening
Environmental
Export Control
RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.