Al3GaN4

metal
· JVASP-104764· Al3GaN4

Al₃GaN₄ is an experimental ternary nitride ceramic compound combining aluminum, gallium, and nitrogen—a research-phase material within the wide-bandgap semiconductor and advanced ceramics family. While not yet in widespread commercial production, this material is being investigated for high-temperature structural applications and next-generation electronic devices where the combined properties of aluminum nitride and gallium nitride could offer advantages in thermal stability, mechanical strength, and electrical performance. Its development represents efforts to engineer improved materials for extreme environments where conventional nitride ceramics face limitations.

high-temperature semiconductorswide-bandgap electronicsresearch compoundsadvanced ceramicsthermal management substratespower device engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65
PropertyValueUnitConditionsSource
Bulk Modulus(K)
Pa
Poisson's Ratio(ν)
-
Shear Modulus(G)
Pa
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Density(ρ)
kg/m³
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Band Gap(Eg)
eV
Dielectric Constant (Relative Permittivity)(εr)
-
Magnetic Moment(μB)
µB
Piezoelectric Modulus(eij)
C/m²
Seebeck Coefficient(S)
µV/K
Verified Unverified Low confidence (<80%) Link to source
PropertyValueUnitConditionsSource
Energy Above Hull(ΔEhull)
eV/atom
Formation Energy(ΔHf)
eV/atom
Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

Export Control

RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.