Al₃GaN₄ is an experimental ternary nitride ceramic compound combining aluminum, gallium, and nitrogen—a research-phase material within the wide-bandgap semiconductor and advanced ceramics family. While not yet in widespread commercial production, this material is being investigated for high-temperature structural applications and next-generation electronic devices where the combined properties of aluminum nitride and gallium nitride could offer advantages in thermal stability, mechanical strength, and electrical performance. Its development represents efforts to engineer improved materials for extreme environments where conventional nitride ceramics face limitations.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 194.2 | GPa | — | ||
Poisson's Ratio(ν) | 0.2400 | - | — | ||
Shear Modulus(G) | 121.0 | GPa | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 3.954 | kg/m³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | 3.505 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 8.881 | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Piezoelectric Modulus(eij) | 0.7305 | C/m² | — | ||
Seebeck Coefficient(S) | -199.9 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.000 | eV/atom | — | ||
Formation Energy(ΔHf) | -1.384 | eV/atom | — |