Al3GaN4 — Properties & Data | MatWorld

Al3GaN4

Name: Al3GaN4
Brand: MatWorld

metal

· JVASP-104764· Al3GaN4

Al₃GaN₄ is an experimental ternary nitride ceramic compound combining aluminum, gallium, and nitrogen—a research-phase material within the wide-bandgap semiconductor and advanced ceramics family. While not yet in widespread commercial production, this material is being investigated for high-temperature structural applications and next-generation electronic devices where the combined properties of aluminum nitride and gallium nitride could offer advantages in thermal stability, mechanical strength, and electrical performance. Its development represents efforts to engineer improved materials for extreme environments where conventional nitride ceramics face limitations.

high-temperature semiconductorswide-bandgap electronicsresearch compoundsadvanced ceramicsthermal management substratespower device engineering

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	28,164.9	ksi	DFT · OptB88vdW
Poisson's Ratio(ν)	0.2400	-	DFT · OptB88vdW
Shear Modulus(G)	17,542.3	ksi	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	0.1428	lb/in³	DFT · OptB88vdW

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)2 entries	3.505	eV	DFT · OptB88vdW
↳	4.300	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	8.881	-	DFT · OptB88vdW
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	4.886	-	DFT · OptB88vdW
↳	4.099	-	DFT · TBmBJ
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Piezoelectric Modulus(eij)	0.7305	C/m²	DFT · OptB88vdW
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	0.000	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.000	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-1.384	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al3GaN4

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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