Al0.99Cd0.01Sb0.99Te0.01
semiconductorAl0.99Cd0.01Sb0.99Te0.01 is a quaternary III-V semiconductor alloy combining aluminum antimonide (AlSb) and cadmium telluride (CdTe) base systems with minimal cadmium and tellurium dopants. This is a research-phase material designed to engineer the bandgap and electronic properties of AlSb for infrared detection and optoelectronic devices, where the small cadmium and tellurium substitutions modify lattice parameters and carrier dynamics without significantly altering the aluminum antimonide matrix. The material is notable in the context of narrow-bandgap semiconductors and would be evaluated by engineers developing infrared sensors, focal plane arrays, or mid-wave thermal imaging systems where bandgap tuning and lattice matching are critical; however, this specific composition appears to be experimental rather than commercially established.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg) | — | eV | — | — |