Al0.99Cd0.01Sb0.99Te0.01

semiconductor

· Al0.99Cd0.01Sb0.99Te0.01

Al0.99Cd0.01Sb0.99Te0.01 is a quaternary III-V semiconductor alloy combining aluminum antimonide (AlSb) and cadmium telluride (CdTe) base systems with minimal cadmium and tellurium dopants. This is a research-phase material designed to engineer the bandgap and electronic properties of AlSb for infrared detection and optoelectronic devices, where the small cadmium and tellurium substitutions modify lattice parameters and carrier dynamics without significantly altering the aluminum antimonide matrix. The material is notable in the context of narrow-bandgap semiconductors and would be evaluated by engineers developing infrared sensors, focal plane arrays, or mid-wave thermal imaging systems where bandgap tuning and lattice matching are critical; however, this specific composition appears to be experimental rather than commercially established.

infrared detectors and sensorsfocal plane arraysthermal imaging optoelectronicsbandgap engineering researchlattice-matched heterostructureslow-temperature semiconductor devices

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions	Source
Band Gap(Eg)	2.210	eV	—

Verified Unverified Low confidence (<80%) Link to source

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

Al0.99Cd0.01Sb0.99Te0.01

Electrical Properties

Regulatory Screening

Environmental

Export Control