Silver iodide (AgI) is an inorganic semiconductor compound formed from silver and iodine, belonging to the I–VII binary chalcogenide family. It is primarily used in photographic emulsions, cloud seeding applications, and specialized optical coatings, where its light-sensitive and nucleation properties are leveraged. AgI is notable for its role in infrared optics and as a research compound for photovoltaic and photodetector development, though it faces competition from more stable alternatives in modern optoelectronic applications.
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| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K)3 entries | 30.43 | GPa | DFT · OptB88vdW | ||
| ↳ | 26.77 range 25.12–31.71median of 3 measurements | GPa | DFT | ||
| ↳ | 31.71 | GPa | DFT · PBE | ||
Elastic Compliance Tensor(Sij) | Matrix (redacted) | 1/GPa | DFT · PBE | ||
Elastic Anisotropy(AU) | 0.02081 | - | DFT · PBE | ||
Elastic Stiffness Tensor(Cij) | Matrix (redacted) | Pa | DFT · PBE | ||
Exfoliation Energy(Eexf) | 88.71 | meV/atom | DFT · OptB88vdW | ||
Poisson's Ratio(ν)2 entries | 0.4300 | - | DFT · OptB88vdW | ||
| ↳ | 0.3478 | - | DFT · PBE | ||
Shear Modulus(G)3 entries | 5.060 | GPa | DFT · OptB88vdW | ||
| ↳ | 6.673 range 6.113–10.74median of 3 measurements | GPa | DFT | ||
| ↳ | 10.74 | GPa | DFT · PBE |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Thermal Conductivity(k) | 2.440 | W/(m·K) | Measured |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 5.522 | kg/m³ | DFT · OptB88vdW |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)3 entries | 3.020 | eV | Measured | ||
| ↳ | 1.411 | eV | DFT · OptB88vdW | ||
| ↳ | 2.725 | eV | DFT · TBmBJ | ||
Dielectric Constant (Relative Permittivity)(εr)3 entries | 7.353 | - | DFT · OptB88vdW | ||
| ↳ | 7.160 | - | DFT · PBE | ||
| ↳ | 7.154 range 5.479–18.11median of 6 measurements | - | DFT · PBEsol | ||
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries | 5.989 | - | DFT · OptB88vdW | ||
| ↳ | 4.502 | - | DFT · TBmBJ | ||
Electronic Dielectric Tensor(ε∞) | Matrix (redacted) | - | DFT · PBE | ||
Total Dielectric Tensor(ε) | Matrix (redacted) | - | DFT · PBE | ||
Electron Effective Mass(m*e) | 0.2100 | me | DFT · OptB88vdW · 27°C | ||
Hole Effective Mass(m*h) | 2.607 | me | DFT · OptB88vdW · 27°C | ||
Magnetic Moment(μB) | 0.000 | µB | DFT · OptB88vdW | ||
Piezoelectric Modulus(eij)2 entries | 0.09146 | C/m² | DFT · PBE | ||
| ↳ | 0.3271 | C/m² | DFT · OptB88vdW | ||
Piezoelectric Stress Tensor(eij) | Matrix (redacted) | C/m² | DFT · PBE | ||
Thermoelectric Power Factor(PF)2 entries | 0.000390 | W/(m·K²) | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 0.00150 | W/(m·K²) | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Seebeck Coefficient(S)2 entries | -61.45 | μV/K | DFT · OptB88vdW · n-type · 1e20 cm⁻³ · 327°C | ||
| ↳ | 367.2 | μV/K | DFT · OptB88vdW · p-type · 1e20 cm⁻³ · 327°C | ||
Spectroscopic Limited Maximum Efficiency (SLME)(SLME) | 8.370 | % | DFT · TBmBJ |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.00350 | eV/atom | DFT · OptB88vdW | ||
Formation Energy(ΔHf)2 entries | -0.2033 | eV/atom | DFT · OptB88vdW | ||
| ↳ | -0.3208 | eV/atom | Measured |
Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data