AgBiS2 — Properties & Data | MatWorld

AgBiS2

Name: AgBiS2
Brand: MatWorld

semiconductor

· AgBiS2

AgBiS2 is a ternary semiconductor compound composed of silver, bismuth, and sulfur, belonging to the family of chalcogenide semiconductors. This material is primarily of research interest for optoelectronic and thermoelectric applications, where its narrow bandgap and moderate mechanical properties make it a candidate for infrared detection, photovoltaic conversion, and solid-state cooling devices. While not yet widely commercialized, AgBiS2 represents an emerging class of lead-free semiconductors being investigated as environmentally compatible alternatives to traditional materials in niche electronic and photonic technologies.

infrared detectorsexperimental photovoltaicsthermoelectric devicesresearch semiconductorslead-free electronicsoptoelectronic materials

Compliance & Regulations

?EAR?Conflict Free?RoHS?REACH?TSCA?Prop 65

Units:

si imperial

Property	Value	Unit	Conditions
Bulk Modulus(K)	67.83	GPa	DFT · OptB88vdW
Poisson's Ratio(ν)	0.3800	-	DFT · OptB88vdW
Shear Modulus(G)	18.32	GPa	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Property	Value	Unit	Conditions	Source
Density(ρ)	6.969	kg/m³	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

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Method

Property	Value	Unit	Conditions
Band Gap(Eg)3 entries	0.9000	eV	Measured
↳	0.5590	eV	DFT · OptB88vdW
↳	1.129	eV	DFT · TBmBJ
Dielectric Constant (Relative Permittivity)(εr)	46.63 range 21.57–71.69median of 2 measurements	-	DFT · PBEsol
High-Frequency Dielectric Constant (ε∞)(ε∞)2 entries	19.18	-	DFT · OptB88vdW
↳	12.90	-	DFT · TBmBJ
Electron Effective Mass(m*e)	0.3200	me	DFT · OptB88vdW · 27°C
Hole Effective Mass(m*h)	0.2733	me	DFT · OptB88vdW · 27°C
Magnetic Moment(μB)	0.000	µB	DFT · OptB88vdW
Spectroscopic Limited Maximum Efficiency (SLME)(SLME)	33.80	%	DFT · TBmBJ

N entriesMultiple entries per property — large groups are collapsed; click a summary row to expand. Use filters above to narrow by form, heat treatment, basis, or test environment.

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Property	Value	Unit	Conditions	Source
Energy Above Hull(ΔEhull)	0.02960	eV/atom	DFT · OptB88vdW
Formation Energy(ΔHf)	-0.2835	eV/atom	DFT · OptB88vdW

Verified Unverified Low confidence (<80%) Link to source

Reference data from cited sources. Not verified or certified by MatWorld Inc. Verify against the source before use in design. Terms: engineering data

Regulatory Screening

Environmental

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RoHS, REACH, and Prop 65 statuses are validated against official substance lists (ECHA SVHC Candidate List, OEHHA Prop 65, RoHS Annex II). Other regulations are estimated from composition and material classification. All screening is a starting point for due diligence — always verify with your supplier before making compliance decisions.

AgBiS2

Mechanical Properties

Physical Properties

Electrical Properties

Other Properties

Regulatory Screening

Environmental

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