AgBiS2 is a ternary semiconductor compound composed of silver, bismuth, and sulfur, belonging to the family of chalcogenide semiconductors. This material is primarily of research interest for optoelectronic and thermoelectric applications, where its narrow bandgap and moderate mechanical properties make it a candidate for infrared detection, photovoltaic conversion, and solid-state cooling devices. While not yet widely commercialized, AgBiS2 represents an emerging class of lead-free semiconductors being investigated as environmentally compatible alternatives to traditional materials in niche electronic and photonic technologies.
Compliance & Regulations
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Bulk Modulus(K) | 9,837.9 | ksi | — | ||
Poisson's Ratio(ν) | 0.3800 | - | — | ||
Shear Modulus(G) | 2,657.1 | ksi | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Density(ρ) | 0.2518 | lb/in³ | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Band Gap(Eg)2 entries | 0.9000 | eV | — | ||
| ↳ | 0.2610 | eV | — | ||
Dielectric Constant (Relative Permittivity)(εr) | 46.63 range 21.57–71.69median of 2 measurements | - | — | ||
Magnetic Moment(μB) | 0.000 | µB | — | ||
Seebeck Coefficient(S) | -0.2200 | µV/K | — |
| Property | Value | Unit | Conditions | Source | |
|---|---|---|---|---|---|
Energy Above Hull(ΔEhull) | 0.02960 | eV/atom | — | ||
Formation Energy(ΔHf) | -0.2835 | eV/atom | — |